Title:
PIEZO-RESONATOR AND PROCESS FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2015/025716
Kind Code:
A1
Abstract:
Provided is a piezo-resonator in which the resonance frequency dispersion due to the thickness dispersion of Si is minimized. This piezo-resonator (1) is provided with: single-crystal Si (5); a piezo-electric thin film (8) which consists of aluminum nitride and which is provided over the single-crystal Si (5); and first and second electrodes (6, 7) provided in such a state that the piezo-electric thin film (8) is sandwiched between both. The piezo-electric thin film (8) consisting of aluminum nitride is doped with an element excluding nitrogen and aluminum, whereby the synthetic sound velocity in the constituent members excluding the single-crystal Si (5) is made substantially equal to the sound velocity in the single-crystal Si (5).
Inventors:
UMEDA KEIICHI (JP)
Application Number:
PCT/JP2014/070761
Publication Date:
February 26, 2015
Filing Date:
August 06, 2014
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H03H9/17; H03H3/02
Foreign References:
| JP2009010926A | 2009-01-15 | |||
| JP2013110655A | 2013-06-06 |
Attorney, Agent or Firm:
MIYAZAKI & METSUGI (JP)
Patent business corporation Miyazaki and table-of-contents patent firm (JP)
Patent business corporation Miyazaki and table-of-contents patent firm (JP)
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