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Title:
PIEZOELECTRIC DEVICE AND METHOD FOR USING SAME
Document Type and Number:
WIPO Patent Application WO/2014/045914
Kind Code:
A1
Abstract:
In a piezoelectric device (10), a piezoelectric film (42) is used that is made of a piezoelectric material having such bias that bipolar polarization-electric field (Pr-E) hysteresis properties are asymmetric, and that has a bias ratio of an anti-electric field of 20 % or more, the bias ratio being defined as [(Ec2+Ec1)/(Ec2-Ec1)]×100[%], where "Ec1" represents a first anti-electric field having the smaller absolute value and "Ec2" represents a second anti-electric field having the greater absolute value. The piezoelectric device includes a piezoelectric element section (28) that operates at an electric field intensity smaller than that of the first anti-electric field. The piezoelectric device (10) further includes a refresh voltage application circuit (36) that applies a voltage that causes an electric field intensity that is greater than an electric field intensity that causes the device to operate and that is equal to or smaller than three times the absolute value |Ec1| of the first anti-electric field, so as to recover the polarization state of the piezoelectric body film (42), in order to keep the operation performance of the piezoelectric device.

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Inventors:
FUJII TAKAMICHI (JP)
Application Number:
PCT/JP2013/074215
Publication Date:
March 27, 2014
Filing Date:
September 09, 2013
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L41/27; G01C19/5614; G01C19/5628; H01L41/04; H01L41/09; H01L41/113; H01L41/187
Foreign References:
JP2004180496A2004-06-24
JP2011138925A2011-07-14
JP2011176038A2011-09-08
JP2004338326A2004-12-02
JPH082309A1996-01-09
JP2007040879A2007-02-15
JP2005340631A2005-12-08
JP2011078203A2011-04-14
JP2011059125A2011-03-24
Other References:
See also references of EP 2899766A4
Attorney, Agent or Firm:
MATSUURA, Kenzo (JP)
Kenzo Matsuura (JP)
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