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Patent Searching and Data


Title:
PIEZOELECTRIC ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/250591
Kind Code:
A1
Abstract:
Provided is a piezoelectric element which can be produced at low cost and which comprises a piezoelectric layer containing a Pb-containing monophasic perovskite type oxide. This piezoelectric element comprises a lower electrode layer, a growth control layer, a piezoelectric layer, which contains a perovskite type oxide containing lead as a primary A-site component, and an upper electrode layer in that order on a substrate. The growth control layer contains a metal oxide represented by MdN1-dOe. Here, M comprises one or more metal elements able to be substituted at A-sites in the perovskite type oxide. If 0 < d < 1 and if electronegativity is denoted by X, 1.41X-1.05 ≤ d ≤ A1·exp(-X/t1)+y0, A1=1.68×1012, t1=0.0306, and y0=0.59958.

Inventors:
UMEDA KENICHI (JP)
FUJII TAKAMICHI (JP)
OKUNO YUKIHIRO (JP)
Application Number:
PCT/JP2020/018079
Publication Date:
December 17, 2020
Filing Date:
April 28, 2020
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L41/319; C01G35/00; C01G55/00; C23C14/08; H01L21/316; H01L41/187; H01L41/316
Domestic Patent References:
WO2015194458A12015-12-23
Foreign References:
JP2019016793A2019-01-31
JP2006186258A2006-07-13
JPH07142600A1995-06-02
JPH07142600A1995-06-02
JP2001223403A2001-08-17
Other References:
See also references of EP 3985747A4
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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