Title:
PIEZOELECTRIC FILM, METHOD FOR PRODUCING SAME AND PIEZOELECTRIC COMPONENT USING PIEZOELECTRIC FILM
Document Type and Number:
WIPO Patent Application WO/2018/008651
Kind Code:
A1
Abstract:
The present invention improves the piezoelectric constant of a GaN piezoelectric film.
A piezoelectric film which is formed of a gallium nitride crystal having a wurtzite structure, and wherein the gallium nitride crystal contains at least one trivalent transition metal element, while having a structure in which some of the gallium atoms in the gallium nitride crystal are substituted by the trivalent transition metal element.
Inventors:
MIZUNO TAKAAKI (JP)
UMEDA KEIICHI (JP)
HONDA ATSUSHI (JP)
AIDA YASUHIRO (JP)
UEHARA MASATO (JP)
AKIYAMA MORITO (JP)
NAGASE TOSHIMI (JP)
YAMADA HIROSHI (JP)
UMEDA KEIICHI (JP)
HONDA ATSUSHI (JP)
AIDA YASUHIRO (JP)
UEHARA MASATO (JP)
AKIYAMA MORITO (JP)
NAGASE TOSHIMI (JP)
YAMADA HIROSHI (JP)
Application Number:
PCT/JP2017/024547
Publication Date:
January 11, 2018
Filing Date:
July 04, 2017
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
AIST (JP)
AIST (JP)
International Classes:
H01L41/187; C23C14/06; C23C14/34; H01L41/113; H01L41/316; H03H3/02; H03H9/17; C01B21/06
Foreign References:
| JP2002374145A | 2002-12-26 | |||
| JP2005109678A | 2005-04-21 |
Other References:
SUZUKI, MASASHI: "Giant piezoelectricity near phase boundary in rare earth doped GaN thin films", EXTENDED ABSTRACTS OF THE JSAP SPRING MEETING, vol. 60, 11 March 2013 (2013-03-11)
YANAGITANI TAKAHIKO: "Enhanced piezoelectricity YbGaN films near phase boundary", APPLIED PHYSICS LETTERS, vol. 104, no. 8, 24 February 2014 (2014-02-24), pages 082911 - 1-082911-3, XP012182510, DOI: doi:10.1063/1.4866969
YANAGITANI TAKAHIKO: "Enhanced piezoelectricity YbGaN films near phase boundary", APPLIED PHYSICS LETTERS, vol. 104, no. 8, 24 February 2014 (2014-02-24), pages 082911 - 1-082911-3, XP012182510, DOI: doi:10.1063/1.4866969
Attorney, Agent or Firm:
INABA, Yoshiyuki et al. (JP)
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