Title:
PIEZOELECTRIC MATERIAL WORKING METHOD
Document Type and Number:
WIPO Patent Application WO/2004/103932
Kind Code:
A1
Abstract:
A mask (14) having a predetermined film thickness distribution is arranged on a piezoelectric material substrate (11), which is subjected to dry etching by using a working speed difference between the piezoelectric material substrate (11) and the mask (14), thereby obtaining a target 3-dimensional shape. The thickness distribution of the mask (14) is adjusted by pressurized fixation using a reflow, a precision mold (15). It is also possible to work the piezoelectric material substrate (11) into a 3-dimensional shape having an amplified film thickness distribution by adjusting the gas composition used for the dry etching. Thus, it is possible to work piezoelectric material into a predetermined 3-dimensional shape without introducing defects and obtain a highly accurate piezoelectric element of high quality.
Inventors:
ABE TAKASHI (JP)
LI LI (JP)
ESASHI MASAYOSHI (JP)
LI LI (JP)
ESASHI MASAYOSHI (JP)
Application Number:
PCT/JP2004/007220
Publication Date:
December 02, 2004
Filing Date:
May 20, 2004
Export Citation:
Assignee:
JAPAN SCIENCE & TECH AGENCY (JP)
ABE TAKASHI (JP)
LI LI (JP)
ESASHI MASAYOSHI (JP)
ABE TAKASHI (JP)
LI LI (JP)
ESASHI MASAYOSHI (JP)
International Classes:
C04B35/491; H03H9/17; H01L21/3065; H03H3/02; (IPC1-7): C04B41/91; H01L41/22; H03H3/02
Foreign References:
| JP2002090980A | 2002-03-27 | |||
| JP2002368572A | 2002-12-20 | |||
| JP2003091070A | 2003-03-28 |
Other References:
See also references of EP 1632466A4
Attorney, Agent or Firm:
Ogura, Wataru (23-7 Kanamecho 3-chom, Toshima-ku Tokyo, JP)
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