Title:
PIEZOELECTRIC THIN FILM ELEMENT AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/033791
Kind Code:
A1
Abstract:
Provided is a piezoelectric thin film element (10) which is provided with: a piezoelectric thin film (3) that is formed by a sputtering method and has a columnar structure; and electrodes (2, 4) that are provided so as to be in contact with the piezoelectric thin film. The piezoelectric thin film has a composition which contains 3.3 moles or less of an element that can serve as a substitute for Nb and has an oxidation number of 2 or more but less than 5 if oxidized per 100 moles of potassium sodium niobate represented by general formula (K1-xNax)NbO3 (wherein 0 < x < 1). This piezoelectric thin film element (10) is capable of suppressing leakage current defects.
Inventors:
IKEUCHI SHINSUKE (JP)
YAMAMOTO KANSHO (JP)
KISHIMOTO YUTAKA (JP)
MATSUKI YOSHITAKA (JP)
ENDO NAOYUKI (JP)
YONEDA TOSHIMARO (JP)
TAKESHIMA YUTAKA (JP)
YAMAMOTO KANSHO (JP)
KISHIMOTO YUTAKA (JP)
MATSUKI YOSHITAKA (JP)
ENDO NAOYUKI (JP)
YONEDA TOSHIMARO (JP)
TAKESHIMA YUTAKA (JP)
Application Number:
PCT/JP2014/071888
Publication Date:
March 12, 2015
Filing Date:
August 21, 2014
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01L41/187; C01G33/00; C01G45/00; C23C14/06; C23C14/08; H01L41/316; H01L41/319
Domestic Patent References:
| WO2012020638A1 | 2012-02-16 | |||
| WO2005021461A1 | 2005-03-10 |
Foreign References:
| JP2012019050A | 2012-01-26 | |||
| JP2013038322A | 2013-02-21 |
Other References:
LINGYAN WANG: "Structures and electrical properties of Mn- and Co-doped lead-free ferroelectric K0.5Na0.5NbO3 films prepared by a chemical solution deposition method", THIN SOLID FILMS, vol. 537, 25 April 2013 (2013-04-25), pages 65 - 69
Attorney, Agent or Firm:
MIYAZAKI & METSUGI (JP)
Patent business corporation Miyazaki and table-of-contents patent firm (JP)
Patent business corporation Miyazaki and table-of-contents patent firm (JP)
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