Title:
PIEZORESISTIVE MEMS SENSOR
Document Type and Number:
WIPO Patent Application WO/2014/088020
Kind Code:
A1
Abstract:
In the present invention, a pressure sensor is configured from a SOI substrate that is configured from a Si substrate (10a), a SiO2 layer (10b), and a surface Si film (10c). An opening (13) is formed in the Si substrate (10a) by etching, and the surface Si film (10c) and the SiO2 layer (10b) corresponding to the opening constitute a displacement section (12) having a membrane structure. The displacement section (12) has a piezoresistive element (11) formed therein. The displacement section (12) bends corresponding to pressure to be detected, and a resistance value of the piezoresistive element changes with the bending. The thickness (ts) of the displacement section (12) having the membrane structure is 1-10 μm, and the peak position (depth) (Pd) of the impurity concentration of the piezoresistive element (11) is deeper than 0.5 μm but shallower than half the thickness of the displacement section (12).
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Inventors:
KONISHI TAKAHIRO (JP)
Application Number:
PCT/JP2013/082545
Publication Date:
June 12, 2014
Filing Date:
December 04, 2013
Export Citation:
Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
G01L9/00; B81B3/00; G01P15/12; H01L29/84
Foreign References:
| JPH04286166A | 1992-10-12 | |||
| JPH07131035A | 1995-05-19 |
Attorney, Agent or Firm:
Kaede Patent Attorneys' Office (JP)
Patent business corporation Kaede Patent Attorneys' Office (JP)
Patent business corporation Kaede Patent Attorneys' Office (JP)
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