Title:
PLANAR STRUCTURE SOLAR CELL WITH INORGANIC HOLE TRANSPORTING MATERIAL
Document Type and Number:
WIPO Patent Application WO/2016/002201
Kind Code:
A1
Abstract:
A method is provided for forming a planar structure solar cell. Generally, the method forms a transparent conductive electrode, with a planar layer of a first metal oxide adjacent to the transparent conductive electrode. For example, the first metal oxide may be an n-type metal oxide. A semiconductor absorber layer is formed adjacent to the first metal oxide, comprising organic and inorganic materials. A p-type semiconductor hole-transport material (HTM) layer is formed adjacent to the semiconductor absorber layer, and a metal electrode is formed adjacent to the HTM layer. In one aspect, the HTM layer is an inorganic material such as a p-type metal oxide. Some explicit examples of HTM materials include stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, and stoichiometric and non-stoichiometric copper (I) oxide. Also provide are planar solar cell devices.
Inventors:
KOPOSOV ALEXEY
ZHAN CHANGQING
PAN WEI
ZHAN CHANGQING
PAN WEI
Application Number:
PCT/JP2015/003273
Publication Date:
January 07, 2016
Filing Date:
June 30, 2015
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L51/46; H01L51/44
Domestic Patent References:
| WO2014045021A1 | 2014-03-27 |
Foreign References:
| US20120211069A1 | 2012-08-23 |
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (2-6 Tenjinbashi 2-chome Kita, Kita-ku, Osaka-sh, Osaka 41, JP)
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