Title:
PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS
Document Type and Number:
WIPO Patent Application WO/2012/040317
Kind Code:
A3
Abstract:
Methods and hardware for depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method for forming a thin conformal film comprises, in a first phase, generating precursor radicals off of a surface of the substrate and adsorbing the precursor radicals to the surface to form surface active species; in a first purge phase, purging residual precursor from the process station; in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the surface active species and generate the thin conformal film; and in a second purge phase, purging residual reactant from the process station.
Inventors:
LI MING (US)
KANG HU (US)
SRIRAM MANDYAM (US)
LAVOIE ADRIEN (US)
KANG HU (US)
SRIRAM MANDYAM (US)
LAVOIE ADRIEN (US)
Application Number:
PCT/US2011/052537
Publication Date:
June 21, 2012
Filing Date:
September 21, 2011
Export Citation:
Assignee:
NOVELLUS SYSTEMS INC (US)
LI MING (US)
KANG HU (US)
SRIRAM MANDYAM (US)
LAVOIE ADRIEN (US)
LI MING (US)
KANG HU (US)
SRIRAM MANDYAM (US)
LAVOIE ADRIEN (US)
International Classes:
H01L21/31; H01L21/205
Foreign References:
| US7148155B1 | 2006-12-12 |
Other References:
P. F. MAN ET AL.: "Elimination of Post-Release Adhesion in Microstrctures using Thin Conformal Fluorocarbon Films", IEEE, 1996, pages 55 - 60
S. V. NGUYEN ET AL.: "Plasma-assist chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits", IBM JOURNAL OF RESEARCH AND DEVELOPMENT, January 1999 (1999-01-01), pages 5 - 38
S. V. NGUYEN ET AL.: "Plasma-assist chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits", IBM JOURNAL OF RESEARCH AND DEVELOPMENT, January 1999 (1999-01-01), pages 5 - 38
Attorney, Agent or Firm:
GAVRILOVA, Anna, L. et al. (P.O. Box 70250Oakland, California, US)
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