Title:
PLASMA CHAMBER FOR WAFER ETCHING AND WAFER ETCHING METHOD USING PLASMA CHAMBER
Document Type and Number:
WIPO Patent Application WO/2023/146076
Kind Code:
A1
Abstract:
The present invention relates to a plasma chamber for wafer etching and a wafer etching method using the plasma chamber. The plasma chamber of the present invention comprises: a housing having a reaction space therein to etch a wafer through plasma; a base plate provided inside the housing and on which the wafer is seated; and a pressure adjusting unit for adjusting the pressure inside the housing, wherein the pressure adjusting unit adjusts the pressure inside the housing to 50-150 mTorr. The wafer etching method using the plasma chamber of the present invention comprises: a pressure adjustment step of adjusting the pressure inside the housing to 50-150 mTorr through the pressure adjusting unit; a source power adjustment step of adjusting a source power of the plasma source to 300-1000 W through the plasma source.
Inventors:
KIM NAM HUN (KR)
Application Number:
PCT/KR2022/017510
Publication Date:
August 03, 2023
Filing Date:
November 09, 2022
Export Citation:
Assignee:
KIM NAM HUN (KR)
International Classes:
H01J37/32
Foreign References:
| KR20100131703A | 2010-12-16 | |||
| KR20070097232A | 2007-10-04 | |||
| KR20200021914A | 2020-03-02 | |||
| KR20060006109A | 2006-01-18 | |||
| KR20170075887A | 2017-07-04 | |||
| KR20110113066A | 2011-10-14 |
Attorney, Agent or Firm:
Y.P.LEE, MOCK & PARTNERS (KR)
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