Title:
PLASMA CHEMICAL VAPOR DEPOSITION DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/208943
Kind Code:
A1
Abstract:
The present invention relates to a plasma chemical vapor deposition device, comprising: a vacuum chamber having a plurality of vacuum spaces which are partitioned so as to be independent from each other; a vacuum control unit for controlling the degrees of vacuum for the vacuum spaces; circular electrodes which are rotationally provided in each vacuum space one by one in the shape where at least a part of each outer circumferential surface is positioned in each vacuum space, and of which the outer circumferential surfaces are surrounded with a base material; at least one magnetic field generating member for forming a magnetic field toward the base material surrounding each circular electrode; and a gas supply unit for supplying a process gas to the inside of the vacuum spaces. Thus, provided is the plasma chemical vapor deposition device which can independently and continuously perform a plurality of processes and can obtain process stability and quality improvement even in a high-speed process.
Inventors:
AN KYOUNG JOON (KR)
KWON O DAE (KR)
KWON O DAE (KR)
Application Number:
PCT/KR2014/005499
Publication Date:
December 31, 2014
Filing Date:
June 23, 2014
Export Citation:
Assignee:
SNTEK CO LTD (KR)
International Classes:
C23C16/509; H01L21/205
Foreign References:
| JP2013040378A | 2013-02-28 | |||
| KR20090107057A | 2009-10-12 | |||
| KR20070089848A | 2007-09-03 | |||
| JP2009138239A | 2009-06-25 | |||
| JP2012102377A | 2012-05-31 |
Attorney, Agent or Firm:
IAM PATENT & LAW FIRM (KR)
특허법인 아이엠 (KR)
특허법인 아이엠 (KR)
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