Title:
PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES FOR DEPOSITING PASSIVATION FILMS ON MICROELECTRONIC STRUCTURES
Document Type and Number:
WIPO Patent Application WO/2022/073176
Kind Code:
A1
Abstract:
A method to produce the microelectronic and display devices (e.g., micro-LEDs) which are coated with a passivation film is provided. In this method, a plasma-enhanced chemical vapor deposition (PE-CVD) process is provided and includes maintaining a flow of a deposition gas while pulsing an RF power between on and an off positions while simultaneously depositing a passivation film (120) on sidewall and top surfaces of a micro-LED structure or other display devices. The passivation film (120) contains silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. The passivation film (120) has a step coverage of greater than 70% or greater than 80%, such that the step coverage is a ratio of an average thickness of a sidewall portion (122) of the passivation film (120) to an average thickness of a top portion (124) of the passivation film (120).
Inventors:
FANG JUN (CN)
CHI HYO-IN (US)
HO DUSTIN W (CN)
CHI HYO-IN (US)
HO DUSTIN W (CN)
Application Number:
PCT/CN2020/119907
Publication Date:
April 14, 2022
Filing Date:
October 09, 2020
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
FANG JUN (CN)
FANG JUN (CN)
International Classes:
C23C16/34; H01L21/033; C23C16/513
Foreign References:
| US20100184302A1 | 2010-07-22 | |||
| US6449132B1 | 2002-09-10 | |||
| US6809043B1 | 2004-10-26 | |||
| CN103177952A | 2013-06-26 | |||
| CN103117338A | 2013-05-22 | |||
| CN105355763A | 2016-02-24 | |||
| CN1822403A | 2006-08-23 | |||
| GB2256967A | 1992-12-23 |
Attorney, Agent or Firm:
LECOME INTELLECTUAL PROPERTY AGENT LTD. (CN)
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