Title:
PLASMA ETCHING METHOD, PLASMA ETCHING DEVICE AND PHOTONIC CRYSTAL MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2010/023925
Kind Code:
A1
Abstract:
Disclosed is a plasma etching method that is capable of performing oblique etching with a high aspect ratio and high uniformity. This plasma etching method is characterized in that an electrical field control member (11) which is pierced by an ion introduction hole (12) in a direction that is oblique with respect to the normal line of the surface of a substrate (S) is provided on the surface of the substrate, a plasma (P) is generated on the surface of the substrate (S) on which the electrical field control member (11) is provided, and the substrate (S) is etched with a high aspect ratio by creating a difference in potential between the plasma and the substrate such that the ions in the plasma are drawn toward the substrate (S).
Inventors:
NODA, Susumu (Kyoto University Kyoto Daigaku Katsura, Nishikyo-ku, Kyoto-sh, Kyoto 10, 〒6158510, JP)
野田進 (〒10 京都府京都市西京区京都大学桂国立大学法人京都大学大学院工学研究科内 Kyoto, 〒6158510, JP)
野田進 (〒10 京都府京都市西京区京都大学桂国立大学法人京都大学大学院工学研究科内 Kyoto, 〒6158510, JP)
Application Number:
JP2009/004178
Publication Date:
March 04, 2010
Filing Date:
August 27, 2009
Export Citation:
Assignee:
Japan Science and Technology Agency (4-1-8, Honcho Kawaguchi-sh, Saitama 12, 〒3320012, JP)
独立行政法人科学技術振興機構 (〒12 埼玉県川口市本町４丁目１番８号 Saitama, 〒3320012, JP)
NODA, Susumu (Kyoto University Kyoto Daigaku Katsura, Nishikyo-ku, Kyoto-sh, Kyoto 10, 〒6158510, JP)
独立行政法人科学技術振興機構 (〒12 埼玉県川口市本町４丁目１番８号 Saitama, 〒3320012, JP)
NODA, Susumu (Kyoto University Kyoto Daigaku Katsura, Nishikyo-ku, Kyoto-sh, Kyoto 10, 〒6158510, JP)
International Classes:
H01L21/3065; G02B1/02
Attorney, Agent or Firm:
Kyoto International Patent Law Office (Hougen-Sizyokarasuma Building, 37 Motoakuozi-tyo, Higasinotouin Sizyo-sagaru, Simogyo-ku, Kyoto-s, Kyoto 91, 〒6008091, JP)
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