Title:
PLASMA ETCHING METHOD AND PLASMA ETCHING DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/185351
Kind Code:
A1
Abstract:
Provided is a plasma etching method for plasma etching a body to be processed that includes a film to be etched and a patterned mask. The plasma etching method has a first step in which the film to be etched is plasma-etched using the mask, and a second step in which, by means of a plasma of a gas containing silicon, a film containing silicon is deposited on at least part of the side wall portions of the film to be etched that was etched in the first step.
Inventors:
KITAGAITO KEIJI (JP)
KOBAYASHI FUMIYA (JP)
TOMURA MAJU (JP)
KOBAYASHI FUMIYA (JP)
TOMURA MAJU (JP)
Application Number:
PCT/JP2014/062470
Publication Date:
November 20, 2014
Filing Date:
May 09, 2014
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2008060566A | 2008-03-13 | |||
| JP2012204668A | 2012-10-22 | |||
| JP2009076661A | 2009-04-09 | |||
| JP2009049141A | 2009-03-05 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
Tadashige Ito (JP)
Tadashige Ito (JP)
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