Title:
PLASMA ETCHING METHOD AND PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/026861
Kind Code:
A1
Abstract:
A plasma etching method according to an exemplary embodiment comprises arranging a substrate on an electrostatic chuck in a region surrounded by a focus ring. The substrate, in a state of being held by the electrostatic chuck, is etched by means of ions from a plasma. The electrostatic chuck includes a plurality of electrodes including a first electrode and a second electrode. The first electrode extends under a central region of the substrate. The second electrode extends under an edge region of the substrate. A plurality of voltages are respectively applied to the plurality of electrodes, wherein the plurality of voltages are determined such that, in the state in which the substrate is held by the electrostatic chuck, the ions from the plasma are incident on both the central region and the edge region substantially vertically.
Inventors:
SAWATAISHI MASAYUKI (JP)
HIROSE JUN (JP)
HIROSE JUN (JP)
Application Number:
PCT/JP2019/028542
Publication Date:
February 06, 2020
Filing Date:
July 19, 2019
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/683
Foreign References:
| JP2016032096A | 2016-03-07 | |||
| JP2011035266A | 2011-02-17 | |||
| JPH04236449A | 1992-08-25 | |||
| JPH06120329A | 1994-04-28 | |||
| JPH07211705A | 1995-08-11 | |||
| JP2017120841A | 2017-07-06 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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