PLASMA ETCHING METHOD USING IMPRINTED MICROPATTERN

WIPO Patent Application WO/2019/027129

A1

The present invention provides a plasma etching method using an imprinted micropattern, the method comprising the steps of: applying an ultraviolet resin to the upper surface of a metal layer formed on a glass substrate, forming a micropattern on the ultraviolet resin through an imprinting process of pressing a micropattern master, and then irradiating the micropattern with ultraviolet light to cure the micropattern; performing a slope deposition process on one side surface and the upper surface of the cured micropattern to form a micropattern reinforcing part thereon; performing a first plasma etching process to remove the ultraviolet resin in an area where the micropattern reinforcing part is not formed to expose the micropattern in the vertical direction; performing a second plasma etching process to remove a metal layer in an area where the metal layer is exposed in the vertical direction; and removing the micropattern and the micropattern reinforcing part remaining on the metal layer from which the vertically exposed area has been removed.

JPH0621393	MANUFACTURE OF SEMICONDUCTOR MEMORY
JP2001284666	METHOD OF FABRICATING FINE PROJECT
JP3108929	[Title of Invention] Dry etching method

LEE SUNG JUNG (KR)
KIM MIN JUNG (KR)
GU JA BUNG (KR)
KWON SANG MIN (KR)

PCT/KR2018/005616

February 07, 2019

May 16, 2018

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GIGALANE CO LTD (KR)
PAVONINEKOREA INC (KR)

H01L21/3065; G03F7/00; H01L21/027

KR101695389B1	2017-01-12
KR20100052598A	2010-05-20
KR20150141915A	2015-12-21
KR20100033311A	2010-03-29
US20150187591A1	2015-07-02

YOON, Byong Kuk et al. (KR)

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