Title:
PLASMA GAS IRRADIATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/042595
Kind Code:
A1
Abstract:
The present invention suppresses a decrease in plasma treatment capability of a plasma gas irradiation device for performing plasma gas irradiation.
A plasma gas is ejected from inside gas ejection openings 56 formed in a downstream side housing 20b, and nitrogen gas is supplied to a protection gas chamber 70 between the housing 20b and a cover portion 28 as a protection gas. The nitrogen gas becomes caught by the plasma gas being ejected from the inside gas ejection openings 56, and is ejected from outside gas ejection openings 62. In this case, since a layer of nitrogen gas Gc is formed around the plasma gas Gp, it is made difficult for the plasma gas Gp to make contact with the atmosphere, making it difficult for a reactive species such as a radical in the plasma gas Gp to react with oxygen, for example, in the atmosphere. As a result, a decrease in plasma treatment capability of the plasma gas Gp can be suppressed and plasma treatment can be successfully performed on an object to be processed.
Inventors:
IKEDO TOSHIYUKI (JP)
JINDO TAKAHIRO (JP)
JINDO TAKAHIRO (JP)
Application Number:
PCT/JP2014/074367
Publication Date:
March 24, 2016
Filing Date:
September 16, 2014
Export Citation:
Assignee:
FUJI MACHINE MFG (JP)
International Classes:
H05H1/24
Domestic Patent References:
| WO2013108797A1 | 2013-07-25 |
Foreign References:
| JP2012059548A | 2012-03-22 | |||
| JP2012014927A | 2012-01-19 | |||
| JP2007191792A | 2007-08-02 | |||
| JP2008146994A | 2008-06-26 |
Other References:
See also references of EP 3197245A4
Attorney, Agent or Firm:
CHUBU PATENT OFFICE (JP)
Central patent business corporation international patent firm (JP)
Central patent business corporation international patent firm (JP)
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