Title:
PLASMA GENERATING METHOD, ORGANIC MATERIAL FILM ETCHING METHOD, NEGATIVE ION GENERATING METHOD AND OXIDIZING OR NITRIDING TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2008/026712
Kind Code:
A1
Abstract:
Discharge plasma is generated by applying a direct current pulse voltage to a
treatment gas. The duty ratio of the direct pulse voltage is controlled to be
0.001% or higher but not higher than 8.0%. The voltage start-up time of the direct
current pulse voltage is set at 0.1V/nsec or higher but not higher than 10,000V/nsec.
Alternatively, the discharge plasma generation and impurity implantation
are performed by applying a positive pulse and a negative pulse from one power
supply.
Inventors:
SAITO, Takao (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 4678530, JP)
齊藤隆雄 (〒30 愛知県名古屋市瑞穂区須田町２番５６号日本碍子株式会社内 Aichi, 4678530, JP)
KONDO, Yoshimasa (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 4678530, JP)
齊藤隆雄 (〒30 愛知県名古屋市瑞穂区須田町２番５６号日本碍子株式会社内 Aichi, 4678530, JP)
KONDO, Yoshimasa (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 4678530, JP)
Application Number:
JP2007/066955
Publication Date:
March 06, 2008
Filing Date:
August 24, 2007
Export Citation:
Assignee:
NGK Insulators, Ltd. (2-56, Suda-cho Mizuho-ku, Nagoya-sh, Aichi 30, 4678530, JP)
日本碍子株式会社 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 Aichi, 4678530, JP)
SAITO, Takao (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 4678530, JP)
齊藤隆雄 (〒30 愛知県名古屋市瑞穂区須田町２番５６号日本碍子株式会社内 Aichi, 4678530, JP)
日本碍子株式会社 (〒30 愛知県名古屋市瑞穂区須田町２番５６号 Aichi, 4678530, JP)
SAITO, Takao (2-56, Suda-cho, Mizuho-ku, Nagoya-sh, Aichi 30, 4678530, JP)
齊藤隆雄 (〒30 愛知県名古屋市瑞穂区須田町２番５６号日本碍子株式会社内 Aichi, 4678530, JP)
International Classes:
H05H1/46; H01L21/3065; H01L21/318
Attorney, Agent or Firm:
HOSODA, Masutoshi et al. (Jowa Takanawa BLDG. 7F, 5-4 Takanawa 1-chome,Minato-k, Tokyo 74, 1080074, JP)