PLASMA PROCESS WITH PHOTORESIST MASK PRETREATMENT

Title:

PLASMA PROCESS WITH PHOTORESIST MASK PRETREATMENT

Document Type and Number:

WIPO Patent Application WO/2009/140139

Kind Code:

A8

Abstract:

A method for etching features in a dielectric layer through a photoresist (PR) mask is provided. The PR mask is patterned using laser light having a wavelength not more than 193 nm. The PR mask is pre-treated with a noble gas plasma, and then a plurality of cycles of a plasma process is provided. Each cycle includes a deposition phase that deposits a deposition layer over the PR mask, the deposition layer covering a top and sidewalls of mask features of the PR mask, and a shaping phase that shapes the deposition layer deposited over the PR mask.

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Inventors:

HEO DONGHO (US)
KIM JI SOO (US)

Application Number:

PCT/US2009/043165

Publication Date:

December 09, 2010

Filing Date:

May 07, 2009

Export Citation:

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Assignee:

LAM RES CORP (US)
HEO DONGHO (US)
KIM JI SOO (US)

International Classes:

H01L21/3065

Attorney, Agent or Firm:

ANDO, Masako et al. (P.O. Box 1687Cupertino, CA, US)

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