PLASMA PROCESSING DEVICE AND FILM FORMATION METHOD

WIPO Patent Application WO/2015/136852

A1

[Problem] To quickly switch between gases in a dielectric-window gas channel in an electromagnetic-discharge plasma processing device, thereby increasing the speed of a process in which different types of plasma processing steps are repeated in an alternating manner in a fixed cycle, while preventing anomalous discharges inside said dielectric-window gas channel. [Solution] This plasma processing device is provided with a gas introduction mechanism for introducing processing gases supplied by a processing-gas supply unit (80) into a chamber (12), said gas introduction mechanism comprising the following three gas lines: a ceiling gas line (82) provided with a gas channel (96) and a gas jetting port (94) in a dielectric window (18); and a lower wall gas line (84) and an upper wall gas line (86) provided with gas channels (100, 108) and gas jetting ports (102, 110) at different heights in a side wall (12a) of the chamber (12). A bypass exhaust line (116) that connects a first gas supply tube (90) for the ceiling gas line (82) to an exhaust unit (55, 56) is also provided.

SAITO TAKEHISA (JP)
NEMOTO TAKENAO (JP)
YAMAGISHI KOJI (JP)
KANEKO HIROSHI (JP)

PCT/JP2015/000863

September 17, 2015

February 23, 2015

Click for automatic bibliography generation  

TOKYO ELECTRON LTD (JP)

H01L21/31; C23C16/455; C23C16/511; H01L21/318; H01L21/8246; H01L27/105; H01L43/12; H05H1/46

JPH07235506A	1995-09-05
JP2008251674A	2008-10-16
JP2010192755A	2010-09-02
JP2008050662A	2008-03-06
JP2012094911A	2012-05-17

SASAKI, Seikoh (JP)
Kiyotaka Sasaki (JP)

View/Download PDF      PDF Help

Previous Patent: DISPLAY APPARATUS

Next Patent: IMAGE PROCESSING DEVICE, IMAGE PROCESSING METHOD, AND PROGRAM