Title:
PLASMA PROCESSING DEVICE, HIGH-FREQUENCY POWER SUPPLY CIRCUIT, AND IMPEDANCE MATCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2022/163461
Kind Code:
A1
Abstract:
This plasma processing device for subjecting a substrate to plasma processing is provided with: a processing container for accommodating the substrate; an electrode for applying high-frequency electric power for generating plasma in the processing container; a high-frequency power source for applying the high-frequency electric power to the electrode; and a high-frequency power supply circuit for supplying the high-frequency electric power from the high-frequency power source to the electrode. The high-frequency power supply circuit includes: a power supply path for supplying electricity from the high-frequency power source to the electrode; and a matching device which includes a negative impedance portion that is connected to the power supply path to realize a negative impedance corresponding to a plasma-side impedance, and which matches the high-frequency power source-side impedance with the plasma-side impedance, which is a load.
Inventors:
SHIRATANI MASAHARU (JP)
KAMATAKI KUNIHITO (JP)
KOGA KAZUNORI (JP)
SHINDO TAKAHIRO (JP)
MATSUDO TATSUO (JP)
KAMATAKI KUNIHITO (JP)
KOGA KAZUNORI (JP)
SHINDO TAKAHIRO (JP)
MATSUDO TATSUO (JP)
Application Number:
PCT/JP2022/001781
Publication Date:
August 04, 2022
Filing Date:
January 19, 2022
Export Citation:
Assignee:
UNIV KYUSHU NAT UNIV CORP (JP)
TOKYO ELECTRON LTD (JP)
TOKYO ELECTRON LTD (JP)
International Classes:
H05H1/46; H03H7/38; H03H11/44
Foreign References:
| JP2008505447A | 2008-02-21 | |||
| JP2005303503A | 2005-10-27 | |||
| US5288971A | 1994-02-22 |
Attorney, Agent or Firm:
TAKAYAMA Hiroshi (JP)
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