PLASMA PROCESSING DEVICE, AND METHOD FOR CONTROLLING HIGH-FREQUENCY POWER SUPPLY OF PLASMA PROCESSING DEVICE

WIPO Patent Application WO/2019/239944

A1

A plasma processing device according to one embodiment comprises a chamber, a substrate support platform, a high-frequency power supply, and a control unit. The substrate support platform includes a lower electrode and is provided inside the chamber. The high-frequency power supply supplies bias high-frequency power to the lower electrode. A focus ring is mounted on the substrate support platform so as to surround the substrate. The control unit, in order to identify a power level of the bias high-frequency power corresponding to a specified value of the direct-current potential of the focus ring, uses the relationship between the power level of the bias high-frequency power and the direct-current potential of the focus ring generated by supply of the bias high-frequency power to the lower electrode. The control unit controls the high-frequency power supply such that bias high-frequency power having the specified power level is supplied to the lower electrode.

JP2022098040	METHOD FOR TREATING SUBSTRATE
JP2020107713	SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
JP4969259	Plasma processing equipment

NAGAIWA TOSHIFUMI (TW)

PCT/JP2019/022024

December 19, 2019

June 03, 2019

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TOKYO ELECTRON LTD (JP)

H01L21/3065; H01L21/683; H05H1/46

JP2008227063A	2008-09-25
JP2017228558A	2017-12-28
JP2010283028A	2010-12-16
JP2007258417A	2007-10-04
JP2010524157A	2010-07-15
JP2010186841A	2010-08-26

HASEGAWA Yoshiki et al. (JP)

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