Title:
PLASMA PROCESSING DEVICE, PROCESSING METHOD USING THIS, SEMICONDUCTOR DEVICE, LIQUID CRYSTAL PANEL AND PLASMA DISPLAY
Document Type and Number:
WIPO Patent Application WO/2006/106857
Kind Code:
A1
Abstract:
When impurities are introduced using plasma, some amounts of the introduced impurities deposit on the inner wall of a vacuum chamber used, and are sputtered again by plasma to be mixed into plasma. The process must be stabilized by avoiding or controlling the mixing. A plasma processing device comprising, to keep the inner wall of a chamber always fresh, a functional thin film that is installed in the vicinity of the inner wall of the chamber and is continuously or intermittently replaced to prevent substances contained in plasma from depositing on the inner wall of the chamber. Or, desired impurities are deposited in sufficient amounts on the inner wall of the vacuum chamber as pre-processing in advance, and are used, when used in an impurities introducing process, by keeping in a stable equilibrium the deposition of impurities and sputtering by plasma.
Inventors:
MIZUNO BUNJI
NAKAYAMA ICHIRO
SASAKI YUICHIRO
OKASHITA KATSUMI
OKUMURA TOMOHIRO
NAKAYAMA ICHIRO
SASAKI YUICHIRO
OKASHITA KATSUMI
OKUMURA TOMOHIRO
Application Number:
PCT/JP2006/306720
Publication Date:
October 12, 2006
Filing Date:
March 30, 2006
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
MIZUNO BUNJI
NAKAYAMA ICHIRO
SASAKI YUICHIRO
OKASHITA KATSUMI
OKUMURA TOMOHIRO
MIZUNO BUNJI
NAKAYAMA ICHIRO
SASAKI YUICHIRO
OKASHITA KATSUMI
OKUMURA TOMOHIRO
International Classes:
H01L21/265; H01L21/22
Foreign References:
| JP2002158177A | 2002-05-31 | |||
| JPH1064475A | 1998-03-06 |
Attorney, Agent or Firm:
Takamatsu, Takeshi (7-13 Nishi-Shimbashi, 1-chom, Minato-ku Tokyo 03, JP)
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