Title:
PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2016/190036
Kind Code:
A1
Abstract:
Provided is a plasma processing device capable of performing both a radical irradiation step and an ion irradiation step by one device and capable of controlling ion irradiation energy in the range of several 10 eV to several KeV.
The plasma processing device has: a mechanism (125, 126, 131, 132) for generating an inductively coupled plasma; a porous plate 116 for dividing a depressurization processing chamber into an upper region 106-1 and a lower region 106-2 and blocking ions; and a switch 133 for switching between the upper region 106-1 and the lower region 106-2 as a plasma generation region.
Inventors:
KOFUJI NAOYUKI (JP)
MORI MASAHITO (JP)
NISHIDA TOSHIAKI (JP)
HAMASAKI RYOJI (JP)
MORI MASAHITO (JP)
NISHIDA TOSHIAKI (JP)
HAMASAKI RYOJI (JP)
Application Number:
PCT/JP2016/063129
Publication Date:
December 01, 2016
Filing Date:
April 27, 2016
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L21/3065; H01L21/336; H01L21/8247; H01L27/115; H01L29/788; H01L29/792; H05H1/46
Foreign References:
| JP2013251546A | 2013-12-12 | |||
| JPH08107101A | 1996-04-23 | |||
| JP2013214583A | 2013-10-17 | |||
| JP2003229419A | 2003-08-15 | |||
| JP2015019064A | 2015-01-29 | |||
| JP2011211200A | 2011-10-20 | |||
| JP2009117843A | 2009-05-28 | |||
| JP2014036034A | 2014-02-24 |
Attorney, Agent or Firm:
INOUE Manabu et al. (JP)
Manabu Inoue (JP)
Manabu Inoue (JP)
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