PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

WIPO Patent Application WO/2021/157051

A1

In order to prevent first high-frequency power from wrapping around an output line of a second high-frequency power source via plasma during wafer processing using a plasma processing device, this plasma processing device comprises: a processing chamber in which a sample is plasma-processed; a sample stand which is equipped with a first electrode and a second electrode disposed on the outer side of the first electrode, and on which the sample is placed; a first high-frequency power source that supplies first high-frequency power to the first electrode via a first matching box and a first transmission path; and a second high-frequency power source that supplies second high-frequency power to the second electrode via a second matching box and a second transmission path. The plasma processing device further comprises a control device that controls the first high-frequency power source so as to supply the first high-frequency power to the sample stand if a preset value of the second matching box is a prescribed value, the prescribed value being a value that will make the impedance of the second transmission path an impedance with which high-frequency power will not be sensed by the second matching box.

SUZUKI TATSUYA (JP)
KASHIBE MAKOTO (JP)

PCT/JP2020/004764

August 12, 2021

February 07, 2020

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HITACHI HIGH TECH CORP (JP)

H05H1/46; H01L21/3065

WO2019229784A1	2019-12-05
WO2005116293A1	2005-12-08

JPH0896992A	1996-04-12
JP2016162795A	2016-09-05
JP2016225376A	2016-12-28

Patent Corporate Body Dai-ichi Kokusai Tokkyo Jimusho (JP)

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