PLASMA PROCESSING DEVICE

WIPO Patent Application WO/2016/114232

A1

A plasma processing device according to the present invention is provided with: a chamber in which the pressure can be reduced and which is configured in such a way that a body to be processed is subjected to plasma processing therein; a flat plate-shaped first electrode which is disposed in the chamber, and on which the body to be processed is mounted; a first high frequency power supply configured to apply a bias voltage having a first frequency to the first electrode; a helical second electrode disposed outside the chamber opposite the first electrode across a quartz plate forming an upper lid of the chamber; and a gas introduction means for introducing a fluorine-containing process gas into the chamber from a gas introduction opening disposed in the upper lid or in the vicinity thereof. A second high frequency power supply for applying an alternating-current voltage having a second frequency, and a third high frequency power supply for applying an alternating-current voltage having a third frequency higher than the second frequency are electrically connected to the second electrode so as to apply two alternating-current voltages simultaneously thereto.

MURAYAMA TAKAHIDE (JP)
MORIKAWA YASUHIRO (JP)
SAKUISHI TOSHIYUKI (JP)

PCT/JP2016/050510

July 21, 2016

January 08, 2016

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ULVAC INC (JP)

H01L21/3065; H05H1/46

JP2003017473A	2003-01-17
JP2003243369A	2003-08-29
JP2012074464A	2012-04-12
JPH0982495A	1997-03-28

SHIGA Masatake et al. (JP)
Masatake Shiga (JP)

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