Title:
PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/012693
Kind Code:
A1
Abstract:
This plasma processing method, which includes an etching step for etching a wafer within a chamber and with which residual halogen, or the like, within the chamber is removed in a short period of time and throughput is improved, comprises: a plasma cleaning step for removing foreign material from the inner walls of the chamber by introducing a halogen component–containing gas within the chamber; and a residual halogen removal step for removing halogen components remaining within the chamber from the plasma cleaning step by repeatedly causing oxygen-containing plasma to alternate between an on state and an off state within the chamber.
Inventors:
TAKAGI YUTA (JP)
HIROTA KOSA (JP)
INOUE YOSHIHARU (JP)
MIYAJI MASAKAZU (JP)
HIROTA KOSA (JP)
INOUE YOSHIHARU (JP)
MIYAJI MASAKAZU (JP)
Application Number:
PCT/JP2019/007598
Publication Date:
January 16, 2020
Filing Date:
February 27, 2019
Export Citation:
Assignee:
HITACHI HIGH TECH CORP (JP)
International Classes:
H01L21/3065
Foreign References:
| JP2016225567A | 2016-12-28 | |||
| JPH09129596A | 1997-05-16 | |||
| JPH10144666A | 1998-05-29 | |||
| JP2015018836A | 2015-01-29 |
Attorney, Agent or Firm:
Patent Corporate Body Dai-ichi Kokusai Tokkyo Jimusho (JP)
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