Title:
PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM
Document Type and Number:
WIPO Patent Application WO/2023/048281
Kind Code:
A1
Abstract:
Provided is a technology that controls the shape of a recessed section formed by etching. This plasma processing method includes: (a) a step in which a substrate having a silicon-including film and a masking film that is formed on the silicon-including film is provided on a substrate support part in a chamber; (b) a step in which a processing gas is supplied into the chamber; and (c) a step in which an RF signal is supplied and plasma of the processing gas is generated in the chamber, while a biasing signal is supplied to the substrate support part, and the substrate is etched. The RF signal is a pulsed wave that includes, in an alternating manner, first periods having a first power level and second periods having a second power level that is lower than the first power level. During step (c), the second power level is reduced relative to the first power level as the etching proceeds.
Inventors:
PARK JAEYOUNG (KR)
FUJISAWA YUICHI (JP)
FUJISAWA YUICHI (JP)
Application Number:
PCT/JP2022/035685
Publication Date:
March 30, 2023
Filing Date:
September 26, 2022
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
| WO2020163100A1 | 2020-08-13 |
Foreign References:
| US20180053661A1 | 2018-02-22 | |||
| US20140363975A1 | 2014-12-11 | |||
| JP2014204050A | 2014-10-27 |
Attorney, Agent or Firm:
SATO, Atsushi et al. (JP)
Download PDF:
Previous Patent: FILTER DEVICE
Next Patent: COATED ZIRCONIUM NITRIDE PARTICLES AND UV-CURABLE BLACK ORGANIC COMPOSITION
Next Patent: COATED ZIRCONIUM NITRIDE PARTICLES AND UV-CURABLE BLACK ORGANIC COMPOSITION