PLASMA TREATMENT APPARATUS

WIPO Patent Application WO/2023/238235

A1

Provided is a plasma treatment apparatus that is characterized by controlling the lengths of a first output period and a second output period for microwave power so as to have a desired wafer ER distribution. This plasma treatment apparatus, in which a plasma treatment is performed by using plasma generated by a pulse-modulated high‐frequency power, is characterized by comprising a control device that controls a pulse generator for generating pulse modulation such that: one cycle of the pulse modulation includes a first output period for a microwave output, a second output period for the microwave output having a finite value smaller than the first output, and an off period during which the microwave output is off; a high-frequency bias is applied during the first output period and the second output period; the first output provides an etching rate distribution in a concave distribution, whereas the second output provides an etching rate distribution in a convex distribution; in the case of having an etching rate distribution in the concave distribution, the length of the first output period is set to be longer than the length of the second output period; and in the case of having an etching rate distribution in the convex distribution, the length of the first output period is set to be shorter than the length of the second output period.

HUANG HAIXIANG (JP)
KUWAHARA KENICHI (JP)

PCT/JP2022/022955

December 14, 2023

June 07, 2022

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HITACHI HIGH TECH CORP (JP)

H01L21/3065

JP2020017565A	2020-01-30
JP2013535074A	2013-09-09
JP2018022599A	2018-02-08
JP2018046215A	2018-03-22

POLAIRE I.P.C. (JP)

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