Title:
PLASMA TREATMENT DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/043070
Kind Code:
A1
Abstract:
This plasma treatment device comprises: a chamber; a substrate support part including an RF electrode; a first RF power supply that is joined to the chamber and that generates a first pulsed RF signal; a second RF power supply that is joined to the RF electrode and that generates a second pulsed RF signal; a Vpp detector that detects a bias Vpp value between the second RF power supply and the RF electrode; and a control unit. The control unit sets power levels of the first and second pulsed RF signals and determines a plurality of phases within one pulse cycle. States of the first and second pulsed RF signals differ between adjacent phases. The control unit sets a target value of the bias Vpp of a selected phase, acquires a representative value of the bias Vpp detected in each phase, and adjusts, on the basis of the set power levels and the acquired representative value, the power levels of the first and second pulsed RF signals in the selected phase so that the bias Vpp value is the target value.
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Inventors:
YAMAZAWA YOHEI (JP)
Application Number:
PCT/JP2023/028861
Publication Date:
February 29, 2024
Filing Date:
August 08, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H05H1/46; H01L21/3065
Foreign References:
| JP2012044045A | 2012-03-01 | |||
| JP2018535504A | 2018-11-29 | |||
| JP2021530833A | 2021-11-11 | |||
| JP2009231248A | 2009-10-08 | |||
| JP2010504614A | 2010-02-12 |
Attorney, Agent or Firm:
SAKAI INTERNATIONAL PATENT OFFICE (JP)
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