PLATING APPARATUS AND METHOD OF PLATING

Title:

PLATING APPARATUS AND METHOD OF PLATING

Document Type and Number:

WIPO Patent Application WO/2007/097335

Kind Code:

A1

Abstract:

[PROBLEMS] To provide a method of plating capable of forming a filled via of 7 μm or less surface unevenness degree. [MEANS FOR SOLVING PROBLEMS] The thickness of diffusion layer (region wherein the concentration of plating components and additives is low) can be reduced by direct contact of flexible insulating contact body (18) as compared with that by the conventional agitation method of bubbling or emitting a jet of plating solution onto the substrate. Accordingly, an inhibitor contained in plating solution components is likely to stick more onto the surface to be plated excluding that of the interior of via hole (36) (within depressed portion) than in the conventional agitation method. By contrast, in the interior of via hole (36) (within depressed portion), since the thickness of the diffusion layer is large as much as the depth of the via hole (36) (depressed portion), sticking of the inhibitor is poor as in the conventional agitation method. Therefore, in the interior of via hole (36) (depressed portion), the rate of growth of plating film is higher than in other regions.

Inventors:

NAKAI TORU (JP)
KAWAI SATORU (JP)

Application Number:

PCT/JP2007/053096

Publication Date:

August 30, 2007

Filing Date:

February 20, 2007

Export Citation:

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Assignee:

IBIDEN CO LTD (JP)
NAKAI TORU (JP)
KAWAI SATORU (JP)

International Classes:

C25D5/16; C25D5/22; C25D7/00; C25D7/06; C25D17/00; H05K3/42

Domestic Patent References:

WO2006033315A1

2006-03-30

Foreign References:

JPS586999A	1983-01-14
JP2005520044A	2005-07-07
JP2003183883A	2003-07-03
JP2005113173A	2005-04-28

Other References: