Title:
PLATING APPARATUS AND PLATING TREATMENT METHOD
Document Type and Number:
WIPO Patent Application WO/2022/123648
Kind Code:
A1
Abstract:
Provided is technology that is capable of suppressing a degradation in wafer plating quality due to process gas retained on the bottom surface of a diaphragm. A plating apparatus 1000 comprises: a plating bath 10 in which an anode 11 is disposed in an anode chamber 13; and a wafer holder 30 which is positioned above the anode chamber and holds a wafer Wf that serves as a cathode, wherein the anode has a cylindrical shape that extends in the vertical direction. The plating apparatus further comprises: a gas retention part 60 which is provided in the anode chamber so as to cover the upper end, the outer peripheral surface and the inner peripheral surface of the anode while maintaining a space between the gas retention part and the anode, and which retains process gas generated by the anode; and a discharge mechanism 70 which discharges the process gas retained in the gas retention part to the outside of the plating bath.
Inventors:
CHANG SHAO HUA (JP)
MASUDA YASUYUKI (JP)
SEKI MASAYA (JP)
MASUDA YASUYUKI (JP)
SEKI MASAYA (JP)
Application Number:
PCT/JP2020/045625
Publication Date:
June 16, 2022
Filing Date:
December 08, 2020
Export Citation:
Assignee:
EBARA CORP (JP)
International Classes:
C25D7/12; C25D21/04
Foreign References:
| JP2008019496A | 2008-01-31 | |||
| JP2006517004A | 2006-07-13 | |||
| JPH11350185A | 1999-12-21 | |||
| JP2019002065A | 2019-01-10 | |||
| JP2005068561A | 2005-03-17 |
Attorney, Agent or Firm:
MIYAMAE, Toru et al. (JP)
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