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Title:
PLATING DEVICE, PLATING METHOD, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2006/064711
Kind Code:
A1
Abstract:
In a face down type jet plating device, it is possible to prevent lowering of the plating quality caused by a minute solid foreign matter attributed to a black film. In the face down type plating device, a partition wall (7) is provided between a semiconductor wafer (1) and an anode electrode (5) so that the anode electrode (5) is separated from the semiconductor wafer (1) by the partition wall (7). A plating bath (100) is divided into a substrate-to-be-plated chamber and an anode electrode chamber.

Inventors:
IWAZAKI YOSHIHIDE
Application Number:
PCT/JP2005/022539
Publication Date:
June 22, 2006
Filing Date:
December 08, 2005
Export Citation:
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Assignee:
SHARP KK (JP)
IWAZAKI YOSHIHIDE
International Classes:
C25D17/00; C25D5/08; C25D7/12; C25D17/10; H01L21/288
Foreign References:
JP2003119598A2003-04-23
JP2002332595A2002-11-22
JP2000319797A2000-11-21
JP2003306794A2003-10-31
JPH07268694A1995-10-17
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (2-6, Tenjinbashi 2-chome Kita,, Kita-ku, Osaka-sh, Osaka, JP)
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