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Title:
PN JUNCTION PREPARATION METHOD, PN JUNCTION AND MODULATOR
Document Type and Number:
WIPO Patent Application WO/2022/213889
Kind Code:
A1
Abstract:
A PN junction, a PN junction preparation method and a modulator. The PN junction comprises a slab waveguide layer (401) and a plurality of waveguides (402) arranged on the slab waveguide layer (401) at intervals in a specific direction. The slab waveguide layer (401) comprises P-type doped regions (401-1) and N-type doped regions (401-2) which are alternately arranged in the specific direction. S-type carrier-depletion regions (403) which are connected end-to-end in the specific direction are formed at junctions between the two types of regions. Each of the plurality of waveguides (402) arranged at intervals comprises a P-type doped region (402-1) and an N-type doped region (402-2). A carrier-depletion region (403) is formed at a junction between the two regions. The projections, on a surface of a slab waveguide region, of the P-type doped regions (402-1), the N-type doped regions (402-2) and the carrier-depletion regions (403) of the plurality of waveguides (402) arranged at intervals substantially coincide with the projections, on the surface of the slab waveguide region, of the corresponding regions of the slab waveguide layer (401). The PN junction has high modulation efficiency and a relatively low optical loss. The PN junction is implemented by using ion implantation doping at a tilt angle, such that the preparation costs can be reduced.

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Inventors:
DONG ZHEN (CN)
LI YANBO (CN)
Application Number:
PCT/CN2022/084719
Publication Date:
October 13, 2022
Filing Date:
April 01, 2022
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G02F1/015; G02F1/025; G02F1/225
Domestic Patent References:
WO2020234098A12020-11-26
Foreign References:
CN110320596A2019-10-11
US20140153859A12014-06-05
US20060008223A12006-01-12
CN105378548A2016-03-02
CN111665645A2020-09-15
CN104393133A2015-03-04
CN105511119A2016-04-20
CN202110374346A2021-04-07
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