Title:
POLISHING AGENT FOR CMP, PROCESS FOR PRODUCING SAME, AND METHOD FOR POLISHING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2015/170436
Kind Code:
A1
Abstract:
The present invention is a polishing agent for chemical mechanical polishing (CMP) which comprises abrasive grains, a protective-film formation agent, and water, characterized in that the protective-film formation agent is a copolymer of styrene and acrylonitrile and has an average molecular weight of 500-20,000. Due to this, an insulating film can be polished in a CMP step while rarely causing polishing scratches. The polishing agent has high polishing selectivity for the insulating film over a polishing stop film. Also provided are a process for producing the polishing agent and a method for polishing a substrate using the polishing agent.
Inventors:
TAKAHASHI MITSUHITO (JP)
Application Number:
PCT/JP2015/001729
Publication Date:
November 12, 2015
Filing Date:
March 26, 2015
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
C09K3/14; B24B37/00; C01F17/235; H01L21/304
Domestic Patent References:
| WO2007069488A1 | 2007-06-21 | |||
| WO2013093557A1 | 2013-06-27 | |||
| WO2013093556A1 | 2013-06-27 | |||
| WO2008010499A1 | 2008-01-24 |
Foreign References:
| JP2008147688A | 2008-06-26 | |||
| JP2011529269A | 2011-12-01 | |||
| JP4894981B2 | 2012-03-14 | |||
| JP2009070904A | 2009-04-02 | |||
| JP2008098525A | 2008-04-24 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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