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Title:
POLISHING APPARATUS AND A SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2000/024548
Kind Code:
A1
Abstract:
The surface of a grindstone is dressed by constant cutting depth processing, preventing the surface of the grindstone from cracking, which might cause scratches, and dressing the dresser. The planarity of the surface of the dresser can be assured. Even if a grindstone as thick as several centimeters is used, the planarity can be maintained throughout the dressing and it is possible to dress a grindstone with small in-plane variation at all times. This can prolong the service life of the dresser significantly. By performing such constant cutting depth dressing while machining a wafer, the machining rate can be maintained and at the same time the throughput of the apparatus can be improved. The apparatus and the method are effective in planarizing an uneven surface of a wafer of any of various types.

Inventors:
Moriyama, Shigeo (Hitachi, Ltd. Instrument Division 882, Ichige Hitachinaka-shi Ibaraki, 312-0033, JP)
Ishida, Yoshihiro (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Kugaya, Takashi (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Ootsuki, Shigeo (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Katagiri, Soichi (Hitachi Ltd, Central Research Laboratory 280, Higashi Koigakubo 1-chome Kokubunji-shi Tokyo, 185-0014, JP)
Nishimura, Sadayuki (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Kawai, Ryosei (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Yasui, Kan (Hitachi Ltd, Central Research Laboratory 280, Higashi Koigakubo 1-chome Kokubunji-shi Tokyo, 185-0014, JP)
Application Number:
PCT/JP1998/004881
Publication Date:
May 04, 2000
Filing Date:
October 28, 1998
Export Citation:
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Assignee:
HITACHI, LTD. (6 Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Moriyama, Shigeo (Hitachi, Ltd. Instrument Division 882, Ichige Hitachinaka-shi Ibaraki, 312-0033, JP)
Ishida, Yoshihiro (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Kugaya, Takashi (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Ootsuki, Shigeo (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Katagiri, Soichi (Hitachi Ltd, Central Research Laboratory 280, Higashi Koigakubo 1-chome Kokubunji-shi Tokyo, 185-0014, JP)
Nishimura, Sadayuki (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Kawai, Ryosei (Hitachi, Ltd. 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo, 101-8010, JP)
Yasui, Kan (Hitachi Ltd, Central Research Laboratory 280, Higashi Koigakubo 1-chome Kokubunji-shi Tokyo, 185-0014, JP)
International Classes:
B24B37/04; B24B41/04; B24B53/007; B24B53/02; B24B53/12; (IPC1-7): B24B53/02; B24B37/00; B24B53/12; H01L21/304
Foreign References:
JPH03154777A
JPH079325A
JPH08323621A
JPH02256463A
JPH08294861A
Other References:
See also references of EP 1125688A1
Attorney, Agent or Firm:
Sakuta, Yasuo (Hitachi, Ltd. 5-1, Marunouchi 1-chome Chiyoda-ku Tokyo, 100-8220, JP)
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