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Patent Searching and Data


Title:
POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2020/196542
Kind Code:
A1
Abstract:
[Problem] The purpose of the present invention is to provide a polishing composition which enables the speed-of-removal of a metal material to be the same as, or similar to, the speed-of-removal of a resin material in a chemical mechanical polishing process, and can even prevent or suppress the occurrence of differences in levels. [Solution] This polishing composition contains: silica, with at least some hydrogen atoms that constitute silanol groups located at the surface of the silica being substituted by cations of at least one type of metal atom M selected from the group consisting of aluminum, chromium, titanium, zirconium, iron, zinc, tin, scandium and gallium; abrasive grains; and a dispersion medium. The pH of the polishing composition is greater than 2 and not greater than 7.

Inventors:
CHANG I-CHUN (TW)
Application Number:
PCT/JP2020/013088
Publication Date:
October 01, 2020
Filing Date:
March 24, 2020
Export Citation:
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Assignee:
FUJIMI INC (JP)
International Classes:
C09G1/02; B24B37/00; C09K3/14; H01L21/304
Domestic Patent References:
WO2017200297A12017-11-23
Foreign References:
JP2018012752A2018-01-25
JP2017524767A2017-08-31
JP2014022511A2014-02-03
JP2007150264A2007-06-14
US20190085209A12019-03-21
JP2006026885A2006-02-02
JP2007299942A2007-11-15
JP2015189898A2015-11-02
JP2019157120A2019-09-19
Attorney, Agent or Firm:
HATTA & ASSOCIATES (JP)
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