Title:
POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING POLISHING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2015/136832
Kind Code:
A1
Abstract:
The present invention is a polishing composition containing crystalline metal oxide particles as abrasive grains, said polishing composition being characterized in that the metal oxide particles are ones in which the half width value of a peak part at which the diffraction intensity becomes maximum in a powder X-ray diffraction pattern is smaller than 1°. Thus, provided are: a polishing composition and a polishing method, in which a high polishing rate can be achieved and the occurrence of defects such as scratching and dishing, which can cause the deterioration in reliability of a semiconductor device, can be prevented during a process for polishing a semiconductor substrate, particularly a process for chemically and mechanically polishing a semiconductor substrate having a metal layer such as a tungsten layer; and a method for producing a polishing composition.
Inventors:
NOJIMA YOSHIHIRO (JP)
Application Number:
PCT/JP2015/000490
Publication Date:
September 17, 2015
Filing Date:
February 04, 2015
Export Citation:
Assignee:
SHINETSU CHEMICAL CO (JP)
International Classes:
B24B37/00; C09K3/14; H01L21/304
Domestic Patent References:
| WO2008081943A1 | 2008-07-10 | |||
| WO2011058816A1 | 2011-05-19 |
Foreign References:
| JP2010016064A | 2010-01-21 | |||
| JP2009163808A | 2009-07-23 | |||
| JP2005126253A | 2005-05-19 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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