Title:
POLISHING COMPOSITION AND METHOD FOR POLISHING SILICON SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2017/110315
Kind Code:
A1
Abstract:
Provided is a polishing composition and a method for polishing a silicon substrate capable of realizing a polished surface having high flatness. The polishing composition contains abrasive grains, including silica. The silica includes bonded particles in which two or more primary particles are bound directly, or via connectors constituted from the same material as the primary particles. The number of all the primary particles included in the bonded particles is 10% or more of the number of all the primary particles included in the abrasive grains. The average value of the area of the bonded portions of the primary particles constituting the bonded particles is 12% or less of the surface area of the primary particles, as calculated based on the average primary particle size of the primary particles constituting the bonded particles.
Inventors:
AKIZUKI REIKO (JP)
TAKAMI SHINICHIRO (JP)
TABATA MAKOTO (JP)
TAKAMI SHINICHIRO (JP)
TABATA MAKOTO (JP)
Application Number:
PCT/JP2016/083934
Publication Date:
June 29, 2017
Filing Date:
November 16, 2016
Export Citation:
Assignee:
FUJIMI INC (JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Foreign References:
| JP2011020208A | 2011-02-03 | |||
| JP2014093099A | 2014-05-19 |
Attorney, Agent or Firm:
MORI Tetsuya et al. (JP)
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