Title:
POLISHING COMPOSITION AND METHOD FOR POLISHING SILICON WAFER
Document Type and Number:
WIPO Patent Application WO/2022/137897
Kind Code:
A1
Abstract:
The present invention provides a polishing composition which is capable of reducing micro defects of a semiconductor wafer after polishing. This polishing composition contains abrasive grains, a basic compound, a wetting agent and a nonionic surfactant. The surface tension γud of this polishing composition is 64 mN/m or less; and the ratio of the surface tension γd when diluted 20 times with water to the surface tension γud, namely γd/γud is from 1.10 to 1.40. Meanwhile, the surface tension γud and the ratio γd are determined at 25°C.
Inventors:
SUGITA NORIAKI (JP)
Application Number:
PCT/JP2021/042157
Publication Date:
June 30, 2022
Filing Date:
November 17, 2021
Export Citation:
Assignee:
NITTA DUPONT INCORPORATED (JP)
International Classes:
C09G1/02; B24B37/00; C09K3/14; H01L21/304
Foreign References:
| JP2004297035A | 2004-10-21 | |||
| JP2001240850A | 2001-09-04 | |||
| JP2008085133A | 2008-04-10 |
Attorney, Agent or Firm:
UEBA, Hidetoshi et al. (JP)
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