Title:
POLISHING COMPOSITION, AND SEMICONDUCTOR-WAFER PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2015/102101
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing a stable polishing composition with which a sufficient polishing rate can be achieved, and which exhibits little change in performance even if used repeatedly. This polishing composition includes colloidal silica, a weak acid salt, and a quaternary ammonium compound, and is used to polish semiconductor wafers. The weak acid salt content is in the range of 1.0×10-7 to 1.0×10-5 mol/m2-SiO2 with respect to the total surface area of the colloidal silica. The quaternary ammonium compound content satisfies the relationship set forth in formula (1), namely Y0=A*X+B, and formula (2), namely -20≤(Y-Y0)/Y0≤100(%), with the caveat that, in the formulae, A represents the theoretical buffer ratio of the weak acid salt to the quaternary ammonium compound, B represents the amount of the quaternary ammonium compound which is adsorbed on the colloidal silica, and which is not free in the polishing composition, Y represents the quaternary ammonium compound content, Y0 represents the optimum amount of the quaternary ammonium compound, and X represents the weak acid salt content.
Inventors:
TAKAMI SHINICHIRO (JP)
ODA HIROYUKI (JP)
MURASE TAKEHIKO (JP)
TABATA MAKOTO (JP)
ODA HIROYUKI (JP)
MURASE TAKEHIKO (JP)
TABATA MAKOTO (JP)
Application Number:
PCT/JP2014/084683
Publication Date:
July 09, 2015
Filing Date:
December 26, 2014
Export Citation:
Assignee:
FUJIMI INC (JP)
International Classes:
H01L21/304; B24B37/00; C09K3/14
Foreign References:
| JP2010153613A | 2010-07-08 | |||
| JP2003297777A | 2003-10-17 | |||
| JP2010245091A | 2010-10-28 | |||
| JP2010130009A | 2010-06-10 |
Attorney, Agent or Firm:
HATTA & ASSOCIATES (JP)
Hatta international patent business corporation (JP)
Hatta international patent business corporation (JP)
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