Title:
POLISHING COMPOSITION AND SILICON WAFER POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/088371
Kind Code:
A1
Abstract:
Provided are a polishing composition and a silicon wafer polishing method that are capable of providing a high degree of flatness. The polishing composition contains abrasive particles and a basic compound. The product of the abrasive particle deformation parameter and the particle diameter distribution width is at least 4. The abrasive particle deformation parameter is the average value for an absolute value | Sr/Si–1 | being a value obtained by deducting 1 from a ratio Sr/Si between a projected area Sr for each particle constituting the abrasive particles and a virtual projected area Si for each particle. The virtual projected area Si is the area of a virtual circle having the vertical Feret's diameter for each particle as the diameter thereof. The abrasive particle diameter distribution width is the difference between 90% particle diameter and 10% particle diameter in the cumulative particle diameter distribution on an abrasive particle volume basis. The unit for 90% particle diameter and 10% particle diameter is nm.
Inventors:
AKIZUKI REIKO (JP)
TSUCHIYA KOHSUKE (JP)
TANIGUCHI MEGUMI (JP)
TSUCHIYA KOHSUKE (JP)
TANIGUCHI MEGUMI (JP)
Application Number:
PCT/JP2017/039983
Publication Date:
May 17, 2018
Filing Date:
November 06, 2017
Export Citation:
Assignee:
FUJIMI INC (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2016060113A1 | 2016-04-21 | |||
| WO2016132676A1 | 2016-08-25 | |||
| WO2016158324A1 | 2016-10-06 |
Foreign References:
| JP2001011433A | 2001-01-16 |
Other References:
See also references of EP 3540761A4
Attorney, Agent or Firm:
SUZUKI Sohbe et al. (JP)
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