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Title:
POLISHING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2016/132951
Kind Code:
A1
Abstract:
[Problem] To provide a polishing composition with which it is possible, in at least one of the acidic, neutral, and basic ranges, to sufficiently control the polishing rate for an object to be polished having a silicon-oxygen bond, such as a silicon oxide film. [Solution] Provided is a polishing composition comprising (1) an organic compound having an active site that interacts with an object to be polished having a silicon-oxygen bond, and a suppression site that suppresses the approach of a polishing constituent for polishing the object to be polished toward the object to be polished, (2) abrasive particles, and (3) a dispersion medium, wherein the polishing rate for the object to be polished having a silicon-oxygen bond is suppressed in at least one of the acidic, neutral, and basic ranges.

Inventors:
YASUI AKIHITO (JP)
Application Number:
PCT/JP2016/053718
Publication Date:
August 25, 2016
Filing Date:
February 08, 2016
Export Citation:
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Assignee:
FUJIMI INC (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
WO2009096495A12009-08-06
WO2013138558A12013-09-19
Foreign References:
JP2012015353A2012-01-19
JP2004273547A2004-09-30
JP2004269577A2004-09-30
Attorney, Agent or Firm:
HATTA & ASSOCIATES (JP)
Hatta international patent business corporation (JP)
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