POLISHING FLUID FOR METALLIC FILM AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE USING THE SAME

Title:

POLISHING FLUID FOR METALLIC FILM AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE USING THE SAME

Document Type and Number:

WIPO Patent Application WO/2003/021651

Kind Code:

A1

Abstract:

A polishing fluid for a metallic film which exhibits an etching rate of 10 nm&sol min or less, a finishing rate at a load of 10 KPa of 200 nm or more, and a contrast, which means a ratio of the finishing rate to the etching rate, of 20 or more&semi and a method for producing a semiconductor substrate using the polishing fluid.

Inventors:

TAKAHASHI HIDEAKI (JP)
OKITA KOSHI (JP)
MIYAZAKI KUON (JP)
MATSUDA TAKAYUKI (JP)

Application Number:

PCT/JP2002/008135

Publication Date:

March 13, 2003

Filing Date:

August 08, 2002

Export Citation:

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Assignee:

ASAHI CHEMICAL IND (JP)
HIDEAKI TAKAHASHI (JP)
OKITA KOSHI (JP)
MIYAZAKI KUON (JP)
MATSUDA TAKAYUKI (JP)

International Classes:

B24B37/04; C09G1/04; H01L21/321; (IPC1-7): H01L21/304; B24B37/00; C09K3/14

Domestic Patent References:

WO2000013217A1

2000-03-09

Foreign References:

JP2000119639A	2000-04-25
JPH11116942A	1999-04-27

Attorney, Agent or Firm:

Asamura, Kiyoshi (New Ohtemachi Bldg. 2-1, Ohtemachi 2-chom, Chiyoda-ku Tokyo, JP)

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