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Title:
POLISHING LIQUID, CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2017/212874
Kind Code:
A1
Abstract:
The present invention addresses the problem of providing: a polishing liquid that, when used for CMP, is not likely to cause flaws in a polished object; and a chemical mechanical polishing method. This polishing liquid is for use in chemical mechanical polishing, includes abrasive grains and an organic acid, and has a Ca concentration of 100 ppt by mass.

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Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2017/018151
Publication Date:
December 14, 2017
Filing Date:
May 15, 2017
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
C09K3/14; B24B37/00; C09G1/02; H01L21/304
Domestic Patent References:
WO2015004567A22015-01-15
Foreign References:
JP2014139258A2014-07-31
JP2010028079A2010-02-04
JP2011159998A2011-08-18
JPH08153696A1996-06-11
Attorney, Agent or Firm:
WATANABE Mochitoshi et al. (JP)
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