Title:
POLISHING LIQUID AND CHEMICAL MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/181487
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a polishing liquid which, when applied to CMP, has a high selectivity of polishing silicon oxide over silicon nitride and which does not tend to cause defects in the polished surface; and to provide a chemical mechanical polishing method.
This polishing liquid is used in chemical mechanical polishing and contains colloidal silica and an onium salt containing a cation. The content of the onium salt exceeds 0.01 mass%, the zeta potential of the colloidal silica measured in a state in the polishing liquid is greater than or equal to 15 mV, the electrical conductivity is greater than or equal to 10 μS/cm, and the pH is 2 to 4.
Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
PCT/JP2019/008700
Publication Date:
September 26, 2019
Filing Date:
March 05, 2019
Export Citation:
Assignee:
FUJIFILM CORP (JP)
International Classes:
H01L21/304; B24B37/00; C09G1/02; C09K3/14
Domestic Patent References:
| WO2011048889A1 | 2011-04-28 |
Foreign References:
| JP2017197590A | 2017-11-02 | |||
| JP2016056292A | 2016-04-21 | |||
| JP2008135452A | 2008-06-12 | |||
| JP2008117807A | 2008-05-22 | |||
| JP2009289885A | 2009-12-10 | |||
| JP2017525793A | 2017-09-07 |
Attorney, Agent or Firm:
NAKASHIMA Junko et al. (JP)
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