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Patent Searching and Data


Title:
POLISHING LIQUID AND CHEMICAL-MECHANICAL POLISHING METHOD
Document Type and Number:
WIPO Patent Application WO/2020/255603
Kind Code:
A1
Abstract:
The present invention provides a polishing liquid that, when applied to chemical-mechanical polishing (CMP) of an item to be polished, said item having a cobalt-including film, can produce semiconductor products that have superior reliability and do not readily experience dishing and erosion in the polished surface of the polished item after polishing. The present invention also provides a chemical-mechanical polishing method using this polishing liquid. This polishing liquid is a polishing liquid used in chemical-mechanical polishing of an item to be polished, said item having a cobalt-including film, and includes a colloidal silica, an organic acid, a passive film forming agent, an anionic surfactant, hydrogen peroxide, potassium, and sodium, wherein the value of the difference resulting from subtracting the ClogP value of the passive film forming agent from the ClogP value of the anionic surfactant is greater than 2.00 and less than 8.00, the mass ratio of the potassium content to the sodium content is 1×106 to 1×109, and the pH is 8.0 to 10.5.

Inventors:
KAMIMURA TETSUYA (JP)
Application Number:
JP2020/019627
Publication Date:
December 24, 2020
Filing Date:
May 18, 2020
Export Citation:
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Assignee:
FUJIFILM CORP (JP)
International Classes:
C09K3/14; B24B37/00; H01L21/304
Attorney, Agent or Firm:
ITOH Hideaki et al. (JP)
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