POLISHING LIQUID FOR CMP AND POLISHING METHOD USING THE SAME

Title:

POLISHING LIQUID FOR CMP AND POLISHING METHOD USING THE SAME

Document Type and Number:

WIPO Patent Application WO/2011/081109

Kind Code:

A1

Abstract:

Provided is a polishing liquid for CMP, with which, during CMP of an ILD film, it is possible to obtain a sufficiently high polishing speed while polishing wear is reduced, aggregation of abrasive grains is suppressed, and a high degree of flatness is obtained, and also provided is a polishing method which uses the polishing liquid for CMP. The polishing liquid for CMP comprises abrasive grains, additives, and water, wherein the abrasive grains include cerium particles and the additives include a 4-pyrone compound represented by general formula (1) and at least one selected from a nonionic surfactant and a cationic surfactant. (In the formula, X11, X12, and X13 are each independently a hydrogen atom or a monovalent substituent group.)

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Inventors:

HANANO Masayuki (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
花野　真之 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)
SATOU Eiichi (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
佐藤　英一 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)

Application Number:

JP2010/073452

Publication Date:

July 07, 2011

Filing Date:

December 24, 2010

Export Citation:

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Assignee:

HITACHI CHEMICAL COMPANY, LTD. (1-1 Nishi-Shinjuku 2-chome, Shinjuku-ku Tokyo, 49, 〒1630449, JP)
日立化成工業株式会社 (〒49 東京都新宿区西新宿二丁目１番１号 Tokyo, 〒1630449, JP)
HANANO Masayuki (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)
花野　真之 (〒55 茨城県日立市東町四丁目１３番１号　日立化成工業株式会社内 Ibaraki, 〒3178555, JP)
SATOU Eiichi (13-1, Higashi-cho 4-chome, Hitachi-sh, Ibaraki 55, 〒3178555, JP)

International Classes:

H01L21/304; B24B37/04; C09K3/14

Attorney, Agent or Firm:

HASEGAWA Yoshiki et al. (SOEI PATENT AND LAW FIRM, Marunouchi MY PLAZA 9th fl.,1-1, Marunouchi 2-chom, Chiyoda-ku Tokyo 05, 〒1000005, JP)

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