POLISHING LIQUID FOR CMP PROCESS AND POLISHING METHOD

Title:

POLISHING LIQUID FOR CMP PROCESS AND POLISHING METHOD

Document Type and Number:

WIPO Patent Application WO/2004/100242

Kind Code:

A1

Abstract:

A polishing liquid for CMP processes is characterized by comprising an abrasive, an aqueous solvent and an additive, and by containing 15 weight% or more of abrasive particles based on the weight of the polishing liquid which particles have particle diameters of 20-80 nm. A polishing method using such a polishing liquid is also disclosed. The polishing liquid is suitable for surface planarization process of a device wafer which is provided with at least a silicon oxide film, and stably exhibits excellent polishing characteristics such as planarization properties, low scratch properties, high cleaning properties, and the like. Consequently, the polishing liquid is most suitable for surface planarization process of semiconductor device and magnetic heads in semiconductor industry which have interlayer insulating films or interdevice isolation films and surface planarization process of substrates for liquid crystal displays.

Inventors:

NAKANO TOMOHARU (JP)
NAKAJIMA FUMIHIRO (JP)
MIYAZAKI TADAKAZU (JP)
BROWN DUNCAN (US)
HEALY MATTHEW D (US)

Application Number:

PCT/JP2004/006027

Publication Date:

November 18, 2004

Filing Date:

May 07, 2004

Export Citation:

Click for automatic bibliography generation Help

Assignee:

SANYO CHEMICAL IND LTD (JP)
ADVANCED TECH MATERIALS (US)
NAKANO TOMOHARU (JP)
NAKAJIMA FUMIHIRO (JP)
MIYAZAKI TADAKAZU (JP)
BROWN DUNCAN (US)
HEALY MATTHEW D (US)

International Classes:

C09G1/02; H01L21/3105; (IPC1-7): H01L21/304

Foreign References:

JP2002184726A	2002-06-28
JPH10172935A	1998-06-26
JP2003086548A	2003-03-20
JP2000280165A	2000-10-10
US5885332A	1999-03-23
EP0962508A1	1999-12-08
JP2002184726A	2002-06-28
JPH10172935A	1998-06-26
JP2003086548A	2003-03-20
JP2000280165A	2000-10-10

Other References: