Title:
POLISHING LIQUID, POLISHING METHOD, COMPONENT MANUFACTURING METHOD, AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/032928
Kind Code:
A1
Abstract:
Provided is a polishing liquid for polishing a member to be polished, said polishing liquid containing abrasive grains which include a cerium oxide, wherein the member to be polished contains a resin and particles which include a silicon compound. Also provided is a polishing method in which the polishing liquid is used to polish a member to be polished that contains a resin and particles including a silicon compound. Also provided is a component manufacturing method in which a member to be polished that has been polished by the polishing method is used to obtain a component. Also provided is a semiconductor component manufacturing method in which a member to be polished that has been polished by the polishing method is used to obtain a semiconductor component.
Inventors:
ARATA SHOGO (JP)
SAKASHITA MASAHIRO (JP)
ICHIGE YASUHIRO (JP)
HOSHI YOUSUKE (JP)
SAKASHITA MASAHIRO (JP)
ICHIGE YASUHIRO (JP)
HOSHI YOUSUKE (JP)
Application Number:
PCT/JP2022/032451
Publication Date:
March 09, 2023
Filing Date:
August 29, 2022
Export Citation:
Assignee:
RESONAC CORP (JP)
International Classes:
C09G1/02; B24B37/00; C09K3/14; H01L21/304
Domestic Patent References:
WO2019142292A1 | 2019-07-25 | |||
WO2019182061A1 | 2019-09-26 | |||
WO2018147074A1 | 2018-08-16 | |||
WO2016006631A1 | 2016-01-14 |
Foreign References:
JP2007318072A | 2007-12-06 | |||
US4161394A | 1979-07-17 | |||
CN111315836A | 2020-06-19 | |||
CN106701020A | 2017-05-24 |
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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